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Número de pieza | 2N5460 | |
Descripción | P-Channel JFETs | |
Fabricantes | Vishay | |
Logotipo | ||
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No Preview Available ! P-Channel JFETs
2N/SST5460 Series
Vishay Siliconix
2N5460
2N5461
2N5462
SST5460
SST5461
SST5462
PRODUCT SUMMARY
Part Number
2N/SST5460
2N/SST5461
2N/SST5462
VGS(off) (V)
0.75 to 6
1 to 7.5
1.8 to 9
V(BR)GSS Min (V)
40
40
40
gfs Min (mS)
1
1.5
2
IDSS Min (mA)
–1
–2
–4
FEATURES
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
D Low Capacitance: 1.2 pF Typical
BENEFITS
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D Low-Current, Low-Voltage Amplifiers
D High-Side Switching
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
S1
D2
G3
Top View
2N5460
2N5461
2N5462
TO-236
(SOT-23)
D1
S2
3G
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-1
1 page 2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Circuit Voltage Gain vs. Drain Current
100
VGS(off) = 1.5 V
80
Common-Source Forward Transconductance
vs. Drain Current
10
VGS(off) = 3 V
60 VGS(off) = 3 V
40
TA = –55_C
1
125_C
25_C
20 Assume VDD = –15 V, VDS = –5 V
0
AV
+1
gfs RL
) RLgos
RL
+
10 V
ID
–0.01
–0.1
ID – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
–1
8
VDS = –15 V
f = 1 kHz
0.1
–0.1
–1
ID – Drain Current (mA)
–10
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz
6
4
–5 V
2 –15 V
0
0 4 8 12 16 20
VGS – Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
100
VDS = –15 V
ID = –0.1 mA
10 ID = –1 mA
1
10
100 1 k 10 k
f – Frequency (Hz)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
100 k
2.5
–5 V
–15 V
0
0 4 8 12 16 20
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
20
VGS(off) = 3 V
16
TA = –55_C
12
25_C
8
125_C
4 VDS = –15 V
f = 1 kHz
0
–0.1
–1
ID – Drain Current (mA)
–10
www.vishay.com
9-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2N5460.PDF ] |
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