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PDF 2N5947 Data sheet ( Hoja de datos )
| Número de pieza | 2N5947 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5947 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2N5947
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Storage Temperature
Symbol
VCEO
VCBO
v EBO
ic
PD
Tstg
Value
30
40
3.5
400
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
CASE 244A-01, STYLE 1
TO-117 (TO-232AA)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (Ic = 20 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (Ic = 100 /uAdc, lg = 0)
Emitter-Base Breakdown Voltage (lg .= 100 /*Adc, cl = 0)
Collector Cutoff Current (Vce = 28 Vdc, Ib = 0)
Collector Cutoff Current (Vcb - 20 Vdc, Ie = 0)
Emitter Cutoff Current 1Vbe = 3.5 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain (Ic = 75 mAdc, Vce = 20 Vdc)
Collector-Emitter Saturation Voltage (Ic = 200 mAdc, Ib = 20 mAdc)
Base-Emitter Saturation Voltage (Ic = 200 mAdc, Ib = 20 mAdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(IC = 75 mAdc, Vce = 20 Vdc, f = 200 MHz)
Collector-Base Capacitance
(VC b = 30 Vdc, El = 0, f = 100 kHz)
Emitter-Base Capacitance
(Veb = 0.5 Vdc, Cl = .0, f = 100 kHz)
Small Signal Current Gain
(lC = 75 mAdc, Vce = 20 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 75 mAdc, Vcb = 20 Vdc, f = 31.8 MHz)
Noise Figure
(lC = 50 mAdc, Vce = 20 Vdc, f = 200 MHz)
(lC = 50 mAdc, Vce = 20 Vdc, f = 200 MHz)(1)
C(l = 75 mAdc, Vce = 20 Vdc, f = 200 MHz)(1)
FUNCTIONAL TEST
(Figure 1)
(Figure 2)
(Figure 2)
Common-Emitter Amplifier Power Gain (Figure 2)
(lC = 75 mAdc, VCE = 20 Vdc, f = 250 MHz)
Intermodulation Distortion (Figure 2)
(lC = 75 mAdc, Vcfe = 20 Vdc, Vout = +50 dBmV)
Cross Modulation Distortion (Figure 2)
(lC = 75 mAdc, VCe = 20 Vdc, Vout = +50 dBmV)
(1) Includes noise figure of post-amplifier and matching pad
Symbol
Min
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CEO
!CBO
'EBO
30
40
3.5
—
—
—
hFE
v CE(sat)
v BE(sat)
25
—
—
*T
Ccb
Ceb
h fe
rb'Cc
NF
1100
—
—
25
2.0
-
G pe
10
IM —
XM —
Typ
—
_
—
_
0.2
1.0
1500
1.5
8.2
-
-
3.8
7.2
7.8
11
-55
-60
Unit
Vdc
Vdc
Vdc
100 ,uAdc
10 /iAdc
100 /uAdc
250
0.35
1.5
-
Vdc
Vdc
- MHz
4.0 pF
12 pF
-300
20 ps
dB
8.5
- dB
-50 dB
-57 dB
7-61
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N5947.PDF ] | |
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