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PDF 2N5179 Data sheet ( Hoja de datos )
| Número de pieza | 2N5179 | |
| Descripción | 50mA, 12V, NPN HIGH FREQUENCY TRANSISTOR ( TO-72 ) | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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 1. - Vcbo=20V, NPN RF Transistor  Hay una vista previa y un enlace de descarga de 2N5179 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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2N5179
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Applicable 1.0 to 2.0 mAdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation (a T"a = 25°C
Derate above 25°C
Total Device Dissipation (a Tc = 25°C
Derate above 25°C
Storage Temperature
Symbol
vCEO
Value
12
Unit
Vdc
vCBO
v EBO
ic
PD
Pd
Tstg
20
2.5
50
200
1.14
300
1.71
-65 to +200
Vdc
Vdc
mAdc
mW
mW/°C
mW
mW/°C
°C
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
dC = 3.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
C(l = 0.001 mAdc, El = 0)
Emitter-Base Breakdown Voltage
(lg = 0.01 mAdc, cl = 0)
Collector Cutoff Current
(VcB = 15 Vdc, Ie = 0)
(Vqb = 15 Vdc, Ie = 0, Ta = 150°C)
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAdc, VC e = 1-0 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAdc, Ib = 1.0 mAdc)
Base-Emitter Saturation Voltage
(lC = 10 mAdc, Ib = 1.0 mAdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(1)
c(l = 5.0 mAdc, Vce = 6.0 Vdc, f = 100 MHz)
Collector-Base Capacitance
(VcB = 10 Vdc, Ie = 0, f = 0.1 to 1.0 MHz)
Small Signal Current Gain
c(l = 2.0 mAdc, Vce = 6.0 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 2.0 mAdc, Vcb = 6.0 Vdc, f = 3T.9 MHz)
Noise Figure (Figure 1)
(lC = 1.5 mAdc, Vce = 6.0 Vdc, Rs = 50 ohms, f = 200 MHz)
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
(VCE = 6.0 Vdc, lc = 5.0 mAdc, f = 200 MHz)
Power Output (Figure 2)
(V C b = 1° Vdc, Ie = 12 mAdc, fs=500 MHz)
(1) fr is defined as the frequency at which |hfe | extrapolates to unity.
Symbol
vCEO(sus)
v (BR)CBO
v (BR)EBO
! CBO
Min
12
20
2.5
-
hFE
v CE(sat)
VBE(sat)
25
—
—
fT
Ccb
h fe
rb'C c
NF
900
—
25
3.0
—
G pe
Pout
15
20
Max
-
—
—
0.02
1.0
250
0.4
1.0
Unit
Vdc
Vdc
Vdc
;uAdc
-
Vdc
Vdc
2000
1.0
300
14
4.5
—
—
MHz
pF
—
ps
dB
dB
mW
7-41
1 page  
2N5179
FIGURE 15- 11r INPUT REFLECTION COEFFICIENT AND S 2 2- OUTPUT REFLECTION COEFFICIENT
I
7-45
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N5179.PDF ] | |
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