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PDF 2N5108 Data sheet ( Hoja de datos )
| Número de pieza | 2N5108 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | INCHANGE | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5108
DESCRIPTION
·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = 50mA
·Low Saturation Voltage
·Good Linearity of hFE
APPLICATIONS
·Designed for general purpose Class C amplifier applications
up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
55 V
VCEO Collector-Emitter Voltage
35 V
VEBO Emitter-Base Voltage
4V
IC Collector Current
Collector Power Dissipation
@TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
0.4 A
3.5
W
1.0
175 ℃
-55~175 ℃
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N5108.PDF ] | |
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