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PDF 2N5829 Data sheet ( Hoja de datos )
| Número de pieza | 2N5829 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5829 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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2N4957
2N4958
2N4959
2N5829
2N4957
JAN, JTX, JTXV AVAILABLE
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
v EBO
ic
PD
TJ' Tstg
Value
30
30
3.0
30
200
1.14
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 ^Adc, l£ = 0)
Emitter-Base Breakdown Voltage
(IE = 100 ^Adc, cl = 0)
Collector Cutoff Current
(VCB = 10 Vdc, El = 0)
(Vcb = 10 Vdc, Ie = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
dC = 2.0 mAdc, VC E = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product! 1)
(IE = 2.0 mAdc, V C E = 10 Vdc, f = 100 MHz)
2N4957, 2N5829
2N4958, 2N4959
Collector-Base Capacitance
(Vcb
=
io
Vdc
-
Ie
=
o, f
=
1.0 MHz)
Small Signal Current Gain
dC = 2.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 2.0 mAdc, Vcb = 10 Vdc, f = 63.6 MHz)
Noise Figure (Figure 1)
dC = 2.0 mAdc, VC E = 10 Vdc, f = 450 MHz)
FUNCTIONAL TEST
2N5829
2N4957
2N4958
2N4959
Common-Emitter Amplifier Power Gain (Figure 1)
(Vce = 10 Vdc, lc = 2.0 mAdc, f = 450 MHz)
2N4957, 2N5829
2N4958
2N4959
(1) fj is defined as the frequency at which |hfe | extrapolates to unity.
Symbol
v(BR)CEO
v (BR)CBO
V(BR)EBO
ICBO
30
30
3.0
-
"FE 20
fT
Ccb
hfe
rb'C c
NF
1200
1000
—
20
1.0
-
G pe
17
16
15
Typ
—
—
—
-
40
1600
1500
0.4
—
—
2.3
2.6
2.9
3.2
—
—
—
Unit
- Vdc
— Vdc
— Vdc
0.1
100
jiAdc
—150
2500
2500
0.8
200
8.0
2.5
3.0
3.3
3.8
25
25
25
MHz
pF
—
ps
dB
dB
7-20
1 page  
H
2N4957 • 2N4958 • 2N4959 • 2N5829
FIGURE 19 - SMALL-SIGNAL CURRENT GAIN
versus FREQUENCY
32
z 28
3 24
z
£ 20
cc
3 16
<z 12
i 8.0
<
3 4.0
^
V CF = 10 Vdc
-4.0
10
20 30
Jh, e |(dB)
„-l ii (hfe
R e (hf e)
"fc~~- —
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000 1500
FIGURE 21 - fj versus COLLECTOR CURRENT
FIGURE 20 -POLAR h fe
-6.0
-8.0
1500 MH?y nnn_
700
f500
*300
200
-10
_ ~ 12
£ -14
|-16
- -18
100V
-20
-22
-24
-26
-28
-30
-6.0 -4.0 -2.0
2.0 4.0
1,75
6.0 8.0
1
VC E = 10 Vdc
ic = 2.0 mA
t
bft
10 12
1 45
14 16
18
R
e
(h fe )
FIGURE 22 - DC CURRENT GAIN
mm-4- fll I
1.4
1U
I ,0
z 0.8
<
0.6
J?
I 02
Jr
2.0
1.0 r
0.7
0.5
0.3
0.2
VCE = 10 Vdc
2.0 4.0 6.0
IC, COLLECTOR CURRENT (mAdc)
FIGURE 23 - CAPACITANCE
Mil
1
"
T[ = 25°C
•nh
Ccb
—
n
o
r—
5
CC
°
=
X[T
'
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0)0
20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
FIGURE 24 - COLLECTOR CHARACTERISTICS
VERTICAL SCALE
If = I.OmA/DIV
l b = 0.02 m A/STEP
1
01 02
i
05 1.0
2.0
50 10 20
REVERSE VOLTAGE (VOLTS)
Apply reverse bias between collector
and base and measure capacitance
between these terminals. Emitter is
open.
HORIZONTAL SCALE - V CE = 1.0 V/DIV
Apply reverse bias between emitter
and base and measure capacitance
between these terminals. Collector is
open
Apply reverse bias between collector
and base and measure capacitance
between these terminals. Emitter is
guarded.
7-24
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N5829.PDF ] | |
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