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PDF 2N4427 Data sheet ( Hoja de datos )
| Número de pieza | 2N4427 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N4427
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
4U
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation (& Tq = 25°C
Derate above 25°C
Storage Temperature
Symbol
VCEO
VCBO
v EBO
>B
ic
PD
Pd
Tstg
Value
20
40
2.0
400
400
1.0
5.71
3.5
20
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
dC = 5.0 mAdc, RgE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, Bl = 0)
Collector Cutoff Current
(Vce = 12 Vdc, Ib = 0)
Collector Cutoff Current
(VC e = 40 Vdc, Vbe = - 1.5 Vdc)
(Vce = 12 Vdc, V BE = -1.5 Vdc, Tc = + 150°C)
Emitter Cutoff Current
(V EB = 2.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, Vce = 5.0 Vdc)
flC = 360 mAdc, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage
0c = 100 mAdc, Ib = 20 mAdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mAdc, Vce = 15 Vdc, f = 200 MHz)
Output Capacitance
(VC B = 12 Vdc, l£ = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 2)
Common-Emitter Amplifier Power Gain
(Pin = 100 mW, Vqc = 1 2 Vdc, f = 175 MHz)
Collector Efficiency
(Pout = 10 W, Vce = 12 Vdc, f = 175 MHz)
Power Input
(Pout = 1-0 W, Vce = 12 Vdc, f = 175 MHz)
Symbol
VCER(sus)
vCEO(sus)
'CEO
'CEV
'EBO
Min
40
20
—
-
—
hFE
v CE(sat)
10
5.0
—
fT
C bo
G pe
V
Pin
500
—
10
50
—
Max
—
—
0.02
0.1
5.0
0.1
200
0.5
—
4.0
—
—
100
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
—
Vdc
MHz
PF
dB
%
mW
7-18
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4427.PDF ] | |
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