(PDF) 2N3960UB Datasheet - NPN SILICON SWITCHING TRANSISTOR

Número de pieza	2N3960UB
Descripción	NPN SILICON SWITCHING TRANSISTOR
Fabricantes	Microsemi
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No Preview Available ! TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399 DEVICES 2N3960 2N3960UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO PT (1) Top, Tstg Value 12 20 4.5 0.4 -65 to +200 Unit Vdc Vdc Vdc W °C Note: Derate linearly 2.3mW/°C above TA = +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10μAdc Collector-Base Cutoff Current VCB = 20Vdc Emitter-Base Cutoff Current VEB = 4.5Vdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc VCE = 10Vdc, VBE = 2.0Vdc Symbol Min. Max. Unit V(BR)CEO 12 Vdc ICBO IEBO ICEX1 ICEX2 10 μAdc 10 μAdc 1 μAdc 5 ηAdc TO-18 – 2N3960 UB – 2N3960UB T4-LDS-0161 Rev. 1 (100514) Page 1 of 4 1 page

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PDF 2N3960UB Data sheet ( Hoja de datos )