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PDF 2N3866A Data sheet ( Hoja de datos )
| Número de pieza | 2N3866A | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N3866
2N3866A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation Ca Jq = 25°C
Derate above 25°C
Storage Temperature
Symbol
VCEO
VCBO
VEBO
'c
PD
T stg
Value
30
55
3.5
0.4
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 5.0 mAdc, Rbe = 10 n)
Collector-Emitter Sustaining Voltage
dC = 5.0 mAdc, Bl = 0)
Emitter-Base Breakdown Voltage
(IE = 100 MAdc, lc = 0)
Collector Cutoff Current
(VC E = 28 Vdc, Bl = 0)
Collector Cutoff Current
(Vce = 30 Vdc, Vbe = -1.5 Vdc (Rev.), Jq = 200°C)
(Vce = 55 Vdc, V B e = -1.5 Vdc (Rev.)
Emitter Cutoff Current
(V B e = 3.5 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 360 mAdc, Vce = 5.0 Vdc)
dC = 50 mAdc, Vce = 5.0 Vdc)
Both
2N3866
2N3866A
Collector-Emitter Saturation Voltage
Oc = 100 mAdc, Ib = 20 mAdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mAdc, Vce = 15 Vdc, f = 200 MHz)
2N3866
2N3866A
Output Capacitance
(VC B = 28 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 1)
Amplifier Power Gain
(VCc = 28 Vd c. Pout = 10 W, f = 400 MHz)
Collector Efficiency
(Vce = 28 Vdc, P out = 1.0 W, f = 400 MHz)
Symbol
vCER(sus)
vCEO(sus)
v (BR)EBO
'CEO
'CEX
'EBO
Min
55
30
3.5
—
-
—
"FE
v CE(sat)
5.0
10
25
—
fT
C bo
G pe
V
500
800
—
10
45
Max
—
—
—
0.02
5.0
0.1
0.1
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
200
200
1.0 Vdc
MHz
-
3.0 PF
— dB
—%
7-9
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N3866A.PDF ] | |
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