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PDF 2N3553 Data sheet ( Hoja de datos )
| Número de pieza | 2N3553 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N3553
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
v EBO
•c
p D.
TJ< Tstg
Value
40
65
4.0
1.0
7.0
40
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mwrc
°c
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
OC = 200 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, Iq = 0)
Collector Cutoff Current
(Vce = 30 Vdc, Bl = 0)
— —vCEO(sus)
40
Vdc
— —v(BR)EBO
4.0
Vdc
— —'CEO
0.1 mAdc
Collector Cutoff Current
(VCE = 30 Vdc, V BE(off) = 1.5 Vdc, TC = 200°C)
(VCE = 65 Vdc, V BE(off) = 1-5 Vdc)
Emitter Cutoff Current
(V B £ = 4.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
OC = 250 mAdc, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage
OC = 250 mAdc, Ib = 50 mAdc)
- -'CEX
mAdc
5.0
1.0
— —'EBO
0.1 mAdc
"FE 10 — — —
— —vCE(sat)
1.0 Vdc
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 100 mAdc, VC E = 28 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 30 Vdc, El = 0, f = 100 kHz)
•t
C bo
— 500 — MHz
— 8.0 10 PF
FUNCTIONAL TEST (FIGURE 2)
Amplifier Power Gain
(VCE = 28 Vdc, Pout = 2.5 Watts, f = 175 MHz)
Collector Efficiency
(VC£ = 28 Vdc, Pout = 2.5 Watts, f = 175 MHz)
Power Input
(VCE = 28 Vdc, P out = 2.5 Watts, f = 175 MHz)
mH(1) Pulsed thru a 25
inductor.
— —G pe
10
dB
V 50 — — %
— —Pin
0.25
Watt
7-7
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3553.PDF ] | |
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