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PDF 2N2857 Data sheet ( Hoja de datos )
| Número de pieza | 2N2857 | |
| Descripción | NPN SILICON RF TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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2N2857
2N3839
NPN SILICON RF TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839
are silicon NPN RF transistors designed for VHF/UHF
amplifier, oscillator and converter applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
30
15
2.5
40
200
300
-65 to +200
UNITS
V
V
V
mA
mW
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2857
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=15V
- 10
ICBO
VCB=15V, TA=150°C
- 1.0
BVCBO
IC=1.0μA
30 -
BVCEO
IC=3.0mA
15 -
BVEBO
IE=10μA
2.5 -
hFE VCE=1.0V, IC=3.0mA
30 150
fT VCE=6.0V, IC=5.0mA, f=100MHz
1.0 1.9
Cob VCB=10V, IE=0, f=100kHz to 1.0MHz
- 1.0
Po VCB=10V, IC=12mA, f=500MHz
30 -
Gpe
VCE=6.0V, IC=1.5mA, f=450MHz, RS=50Ω 12.5
19
NF
VCE=6.0V, IC=1.5mA, f=450MHz, RS=50Ω
-
4.5
rb’Cc
VCB=6.0V, IC=2.0mA, f=31.9MHz
4.0 15
2N3839
MIN MAX
- 10
- 1.0
30 -
15 -
2.5 -
30 150
1.0 2.0
- 1.0
30 -
12.5 19
- 3.9
1.0 15
UNITS
nA
μA
V
V
V
GHz
pF
mW
dB
dB
ps
R1 (31-January 2013)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N2857.PDF ] | |
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