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Número de pieza | 2N2857 | |
Descripción | HIGH FREQUENCY TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N2857 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 2N2857
2N3839
2N2857
JAN, JTX, JTXV AVAILABLE
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C
Storage Temperature
Symbol
vCEO
VCBO
VEBO
'C
PD
Pd
Tsta
Value
15
30
2.5
40
200
1.14
300
1.72
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
dC = 3.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
<IC =? T.O /xAdc, l£ = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /iAdc, lc = 0)
Collector Cutoff Current
(Vqb = 15 Vdc, El - 0)
(Vcb = 15 Vdc, l£ = 0, Ta = 150°C)
ON CHARACTERISTICS
DC Current Gain
dC = 3.0 mAdc, Vqe = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Productd)
dC = 5.0 mAdc, Vqe = 6.0 Vdc, f = 100 MHz)
Both Types
2N3839
2N2857
2N3839
Collector-Base Capacitance
(Vcb = 10 Vdc, l£ = 0, f = 0.1 to 1.0 MHz)
Small Signal Current Gain
dC = 2.0 mAdc, Vqe = 6.0 Vdc, f = 1.0 kHz)
Collector Base Time Constant
E(l = 2.0 mAdc, VC B = 6.0 Vdc, f = 31.9 MHz)
2N2857
2N3839
Noise Figure (Figure 1)
E(l = 0.1 mAdc, VCE = 1.0 Vdc, Rs = 50 ohms, f = 450 MHz)(2) Both Types
C(l = 1.5 mAdc, VC E = 6.0 Vdc, Rs = 50 ohms, f = 450 MHz) 2N2857
2N3839
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
(IE = 0.1 mAdc, Vqe = 10 Vdc, f = 450 MHz, R S = 50n))(2)
C(l = 1.5 mAdc, VC E = 6.0 Vdc, f = 450 MHz, Rs = 50J1)
Power Output (Figure 2)
(IE
=
12
mAdc, Vcb
=
1°
Vdc
<
f
=
500
MHz
*
(1) fj is defined as the frequency at which |hfe | extrapolates to unity.
(2) Micro-Power Specifications.
'Indicates Data in addition to JEDEC Requirements.
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CBO
hFE
fT
Ccb
h fe
rb'C c
NF
G pe
p out
15
30
2.5
-
30
1000
1000
—
50
4.0
1.0
-
12.5
30
Typ
—
—
—
-
—
-
0.7
—
-
5.8
4.1
11
—
- Vdc
— Vdc
— Vdc
0.01
1.0
150
,uAdc
—
1900
2000
1.0
220
15
15
4.5
3.9
19
—
MHz
pF
—
ps
dB
dB
mW
7-2
1 page 2N2857 • 2N3839
FtGURE 16-Sn. INPUT REFLECTION COEFFICIENT AND S22. OUTPUT REFLECTION COEFFICIENT
7-6
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2N2857.PDF ] |
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