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PDF 2N6305 Data sheet ( Hoja de datos )
| Número de pieza | 2N6305 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (5 T"a = 25°C
Derate above 25°C
Storage Temperature
Symbol
VCEO
VCBO
VEBO
ic
pd
Tstg
Value
15
30
3.0
50
200
1.14
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/X
°C
2N6304
2N6305
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, In. = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage
E(l = 0.1 mAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 5.0 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 2.0 mAdc, Vqe = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(IC = 10 mAdc, VC E = 5.0 Vdc, f = 100 MHz)
2N6304
2N6305
Collector-Base Capacitance
(VCB = 1 ° Vd(=. Ie = 0, f = 1.0 MHz)
Small Signal Current Gain
C(l = 2.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
Collector Base Time Constant
E(l = 2.0 mAdc, Vcb = 5.0 Vdc, f = 31.8 MHz)
2N6304
2 N 6305
Noise Figure
(lC
=
2.0
mAdc, Vce
=
50 vdc
-
RS
=
50 ohms,
f = 450 MHz) (Figure 1)
2N6304
2N6305
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
C(l = 2.0 mAdc, VC e = 5.0 Vdc, f = 450 MHz) (Figure 1)
2N6304
2N6305
Symbol
v (BR)CEO
v (BR)CBO
V(BR)EBO
!CBO
hFE
h
Ccb
hfe
rb'C c
NF
Gpe
15
30
3.5
—
25
1400
1200
—
25
2.0
2.0
-
15
12
Typ
—
—
—
—
—
-
0.8
—
-
-
-
Unit
— Vdc
— Vdc
— Vdc
10 nAdc
—250
MHz
-
1.0 PF
—250
ps
12
15
dB
4.5
5.5
- dB
7-71
1 page  
2N6304 • 2N6305
FIGURE 13 - Sn. INPUT REFLECTION COEFFICIENT AND S2 2,
OUTPUT REFLECTION COEFFICIENT
7-75
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N6305.PDF ] | |
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