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PDF 2N6255 Data sheet ( Hoja de datos )
| Número de pieza | 2N6255 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N6255
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Jq = 25°C
Derate above 25°C
Storage Temperature
Symbol
vCEO
v CBO
v EBO
ic
PD
Tstg
Value
18
36
4.0
1.0
5.0
28.5
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic
Symbol
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, Vbe = 0)
Emitter-Base Breakdown Voltage
(IE = 1.0 mAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
Collector Cutoff Current
(Vce = 15 Vdc, V B e = 0, TC = 55°C)
ON CHARACTERISTICS
DC Current Gain
dC = 250 mAdc, Vce = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
(Vcb = 12.5 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 1)
Common-Emitter Amplifier Power Gain
( pout = 3.0 W, Vce = 12-5 Vdc, f = 175 MHz)
Collector Efficiency
(Pout
=
3-0 W, VC c
=
12- 5 Vdc f
'
=
1 ? 5 MHz)
V(BR)CEO
V(BR)CES
V(BR)EBO
!CBO
'CES
18
36
4.0
—
—
— — Vdc
— — Vdc
— — Vdc
— 0.25
mAdc
— 5.0 mAdc
— - -hFE
5.0
—C bo
15 20 PF
— -GpE
7.8
dB
V 50 — — %
7-65
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6255.PDF ] | |
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