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PDF 2N4402 Data sheet ( Hoja de datos )

Número de pieza 2N4402
Descripción GENERAL PURPOSE TRANSISTOR
Fabricantes Motorola Semiconductors 
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No Preview Available ! 2N4402 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2N4402
2N4403*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
40
5.0
600
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
40 — Vdc
5.0 — Vdc
— 0.1 µAdc
— 0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2–32
Motorola Small–Signal Transistors, FETs and Diodes Device Data

1 page




2N4402 pdf
2N4402 2N4403
STATIC CHARACTERISTICS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
VCE = 1.0 V
VCE = 10 V
0.2 0.3 0.5 0.7 1.0
TJ = 125°C
25°C
– 55°C
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
30
50 70 100
200 300 500
1.0
0.8
0.6
IC = 1.0 mA
0.4
10 mA
100 mA
0.2
0
0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0 3.0
Figure 15. Collector Saturation Region
5.0 7.0 10
500 mA
20 30 50
1.0
TJ = 25°C
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
VBE(sat) @ VCE = 10 V
0.2
0
0.1 0.2
VCE(sat) @ IC/IB = 10
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
500
0.5
0
qVC for VCE(sat)
0.5
1.0
1.5
2.0 qVS for VBE
2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
2–36
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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