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PDF 2N4400 Data sheet ( Hoja de datos )
| Número de pieza | 2N4400 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N4400 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2N4400
2N4401*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
60
6.0
600
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
60 — Vdc
6.0 — Vdc
— 0.1 µAdc
— 0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–27
1 page  
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
VCE = 1.0 V
VCE = 10 V
STATIC CHARACTERISTICS
TJ = 125°C
25°C
– 55°C
2N4400 2N4401
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
30
50 70 100
200 300 500
1.0
0.8
0.6
IC = 1.0 mA
0.4
10 mA
100 mA
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0 3.0
5.0 7.0 10
Figure 16. Collector Saturation Region
TJ = 25°C
500 mA
20 30 50
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 10 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
500
+ 0.5
0 qVC for VCE(sat)
– 0.5
– 1.0
– 1.5
– 2.0 qVB for VBE
– 2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
500
Figure 18. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–31
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N4400.PDF ] | |
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