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PDF BAS21M3T5G Data sheet ( Hoja de datos )
| Número de pieza | BAS21M3T5G | |
| Descripción | High Voltage Switching Diode | |
| Fabricantes | ON Semiconductor | |
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BAS21M3T5G
High Voltage Switching
Diode
The BAS21M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for high voltage switching
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
250
200
625
Vdc
mAdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD mW
265
mW/°C
2.1
Thermal Resistance,
Junction−to−Ambient
RqJA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD 640 mW
5.1 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
195 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
250 V
HIGH VOLTAGE
SWITCHING DIODE
3
CATHODE
1
ANODE
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
AM M
2
1
STYLE 2
1
AM = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS21M3T5G
SOT−723 8000 / Tape &
(Pb−Free)
Reel
NSVBAS21M3T5G SOT−723 8000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1
Publication Order Number:
BAS21M3/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAS21M3T5G.PDF ] | |
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