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PDF QM2602S Data sheet ( Hoja de datos )

Número de pieza QM2602S
Descripción MOSFETs
Fabricantes UBIQ 
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QM2602S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM2602S is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The QM2602S meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
20V
-20V
RDSON
16m
50m
ID
7.7 A
-4.6 A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Dual SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
S1 G1S2 G2
Rating
N-Ch
P-Ch
20 -20
±8 ±8
7.7 -4.6
6.2 -3.6
31 -18.4
1.5 1.5
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
85
25
Units
V
V
A
A
A
W
Unit
/W
/W
Rev A.02 D051111
1

1 page




QM2602S pdf
QM2602S
N-Ch and P-Ch Fast Switching MOSFETs
10000
F=1.0MHz
1000
Ciss
100 Coss
Crss
10
1 5 9 13 17
VDS Drain to Source Voltage (V)
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1 0.1
0.05
21
Fig.8 Safe Operating Area
0.01
0.01
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
PDM
T ON
T
D = TON/T
TJpeak = TC+PDMXRθJC
10 100
Fig.9 Normalized Maximum Transient Thermal Impedance
1000
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
5

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