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PDF QM2608N8 Data sheet ( Hoja de datos )

Número de pieza QM2608N8
Descripción MOSFETs
Fabricantes UBIQ 
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QM2608N8
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM2608N8 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The QM2608N8 meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
20V
-20V
RDSON
48m
70m
ID
3.8A
-3.4A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
DFN3X2 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
1
Rating
N-Channel P-Channel
20 -20
±12
±8
3.8 -3.4
3 -2.7
15.2 -14
1.1 1.1
-55 to 150 -55 to 150
-55 to 150 -55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
Max.
110
70
Unit
/W
/W
Rev A.01 D031411

1 page




QM2608N8 pdf
QM2608N8
N-Ch and P-Ch Fast Switching MOSFETs
1000
F=1.0MHz
Ciss
100
Coss
Crss
10
1 5 9 13 17
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
1
DUTY=0.5
21
Fig.8 Safe Operating Area
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE
0.001
0.0001
PDM
T ON
T
D = TON/T
TJpeak = TA+PDMXRθJA
0.001
0.01 0.1
1
t , Pulse Width (s)
10
Fig.9 Normalized Maximum Transient Thermal Impedance
100
1000
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
5

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