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PDF QM10N60F Data sheet ( Hoja de datos )
| Número de pieza | QM10N60F | |
| Descripción | MOSFETs | |
| Fabricantes | UBIQ | |
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QM10N60F
機密
第1頁
2011-11-15 - 1 -
N-Ch 600V Fast Switching MOSFETs
General Description
The QM10N60F is the highest performance N-ch
MOSFETs with specialized high voltage
technology, which provide excellent RDSON and
gate charge for most of the SPS, Charger ,Adapter
and lighting applications .
The QM10N60F meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
600V
RDSON
0.7Ω
ID
12A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
EAS
IAS
PD@TC=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
G DS
Rating
600
±30
10
6.3
20
12.3
4.8
42
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
3
Units
V
V
A
A
A
mJ
A
W
℃
℃
Unit
℃/W
℃/W
Rev A.01 D110311
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet QM10N60F.PDF ] | |
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