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PDF MMBT2222AWT1G Data sheet ( Hoja de datos )

Número de pieza MMBT2222AWT1G
Descripción General Purpose Transistor
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MMBT2222AWT1G,
SMMBT2222AWT1G
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT323/SC70 package which
is designed for low power surface mount applications.
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
TA = 25C
PD 150 mW
Thermal Resistance, JunctiontoAmbient RqJA
833 C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
SC70
CASE 419
STYLE 3
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
P1 MG
G
1
P1 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
MMBT2222AWT1G
SMMBT2222AWT1G
SC70
(PbFree)
SC70
(PbFree)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 6
1
Publication Order Number:
MMBT2222AWT1/D

1 page




MMBT2222AWT1G pdf
MMBT2222AWT1G, SMMBT2222AWT1G
1
IC/IB = 10
150C
0.1
55C
25C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
1.3
1.2 IC/IB = 10
1.1
1.0
0.9 55C
0.8
0.7 25C
0.6
0.5 150C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.1 VCE = 1 V
1.0
0.9 55C
0.8
0.7 25C
0.6
0.5 150C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Voltage vs. Collector
Current
+0.5
0 RqVC for VCE(sat)
- 0.5
- 1.0
- 1.5
- 2.0 RqVB for VBE
- 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
500
10
1
Thermal Limit
100 ms
1s
10 ms
1 ms
0.1
0.01
Single Pulse Test
0.001 @ TA = 25C
0.01 0.1
1
10
VCE (Vdc)
Figure 15. Safe Operating Area
100
http://onsemi.com
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