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PDF WPM6207 Data sheet ( Hoja de datos )

Número de pieza WPM6207
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI 
Logotipo WillSEMI Logotipo



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No Preview Available ! WPM6207 Hoja de datos, Descripción, Manual

WPM6207
Single P-Channel, -20V, -5.7A, Power MOSFET
VDS (V)
-20
Max Rds(on) (mΩ)
30@ VGS=4.5V
40@ VGS=2.5V
60@ VGS=1.8V
Descriptions
The WPM6207 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS
(ON) with low gate charge. This device is suitable
for use in DC-DC conversion, power switch and
charging circuit. Standard Product WPM6207 is
Pb-free.
WPM6207
www.sh-willsemi.com
SOT-23-3
D
3
12
GS
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC
current
Extremely Low Threshold Voltage
Small package SOT-23-3
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered Systems
Pin configuration (Top view)
3
PBYW
12
PB = Specific Device Code
Y = Year
W = Week
Marking
Order information
Device
Package
Shipping
WPM6207-3/TR SOT-23-3 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jun, 2015 - Rev.1.0

1 page




WPM6207 pdf
4000
F=1MHZ
3000
2000
Ciss
1000
Coss
Crss
0
4
8 12 16
-VDS-Drain to Source Voltage(V)
Capacitance
20
50
10
300ms
1ms
1 10ms
100ms
0.1 1s
DC
WPM6207
10
VDD=-10V
8 ID=-5.7A
6
4
2
0
0 10 20 30
Qg (nc)
Gate charge Characteristics
2
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Single Pulse
T =25oC
0.01 A
0.01
0.1
1
10 100
-VDS - Drain - Source Voltage (V)
1E-3
RqJA : 85 oC/W
1E-4 1E-3 0.01 0.1
1
10 30
Square Wave Pulse Duration (S)
Safe operating power
Transient thermal response
(Junction-to-Ambient)
Will Semiconductor Ltd. 5 Jun, 2015 - Rev.1.0

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