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PDF WPM2080 Data sheet ( Hoja de datos )

Número de pieza WPM2080
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI 
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No Preview Available ! WPM2080 Hoja de datos, Descripción, Manual

WPM2080
Single P-Channel, -20V, -4.0A, Power MOSFET
VDS (V)
-20
Typical RDS(on) (m)
43 @ VGS=-4.5V
55 @ VGS=-2.5V
WPM2080
Http://www.sh-willsemi.com
Descriptions
The WPM2080 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2080 is Pb-free.
Features
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PD = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
Package
Shipping
WPM2080-3/TR SOT-23-3L 3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/05/30- Rev.1.0

1 page




WPM2080 pdf
WPM2080
1200
1000
800
600
400
200
0
F=1MHz
Ciss
Crss
Coss
2468
-VDS-Drain to Source Voltage (V)
Capacitance
10
10
9
8
7
6
5
4
T=150oC
T=25oC
3
2
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD-Source to Drain Voltage (V)
Body diode forward voltage
120
100 TJ(MAX)=150oC
TA=25oC
80
60
40
20
0
1E-4
1E-3
0.01
0.1
1
10
Pulse width (S)
100 1000
100
Limit by Rdson
10 100us
1
10s
1ms
10ms
100ms
0.1
T =25oC
A
Single Pulse
1s
DC
BVDSS Limit
0.01
0.1
1 10
-V -Drian to Source Voltage(V)
DS
*V >minimum V at which R is specified
GS GS DS(ON)
100
Single pulse power
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
VDS=-10V
I =-3.3A
D
Safe operating power
2468
Qg(nC)
Gate Charge Characteristics
10
Will Semiconductor Ltd. 5 2016/05/30- Rev.1.0

5 Page










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