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PDF WPM2049B Datasheet ( Hoja de datos )

Número de pieza WPM2049B
Descripción MOSFET
Fabricantes WillSEMI 
Logotipo WillSEMI Logotipo

Total 7 Páginas
		
WPM2049B Hoja de datos, Descripción, Manual
WPM2049B
Single P-Channel, -20V, -0.51A, Power MOSFET
VDS (V)
-20
Typical Rds(on) (Ω)
0.440@ VGS=-4.5V
0.640@ VGS=-2.5V
0.880@ VGS=-1.8V
WPM2049B
Http://www.sh-willsemi.com
Descriptions
The WPM2049B is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2049B is Pb-free and
Halogen-free.
Features
Trench Technology
ESD protection up to 2 kV
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
DFN1006-3L
Pin configuration (Top view)
E*
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
E = Device Code
* = Month (A~Z)
Marking
Order information
Device
WPM2049B-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd. 1 Jul, 2015 - Rev.1.0

1 page

WPM2049B pdf
WPM2049B
120
90
60
30
0
0
VGS=0
f=100KHZ
Ciss
Coss
Crss
2468
-VDS - Drain to Source Voltage (V)
10
250
200
150
100
50
0.4
T=1250C
T=250C
0.5 0.6 0.7 0.8
-V - Source to Drain Voltage(V)
SD
0.9
Capacitance
9
TJ(Max) =150C
TA=25C
6
3
0
1E-4
1E-3
0.01 0.1
1
Pulse width (S)
10
100 1000
Single pulse power
Body diode forward voltage
10
1 Limit by Rdson
I Limit
DM
0.1
0.01
0.1
100us
1ms
DC 10ms
TA=25C
Single Pulse
BVdss Limit
100ms
1s
10s
1 10
-V - Drain to Source Voltage (V)
DS
*V >minimum V at which R is specified
GS GS DS(on)
100
Safe operating power
5
4
VDS= -10V
ID= - 0.45A
3
2
1
0
0 150 300 450 600 750 900
Qg(pC)
Will Semiconductor Ltd. 5 Jul, 2015 - Rev.1.0

5 Page



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