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PDF WNM01N10 Data sheet ( Hoja de datos )

Número de pieza WNM01N10
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI　
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No Preview Available ! WNM01N10 Hoja de datos, Descripción, Manual

WNM01N10
Single N-Channel, 100V, 1.7A, Power MOSFET
VDS (V)
100
Typical Rds(on) (Ω)
0.235@ VGS=10V
0.255@ VGS=4.5V
Descriptions
The WNM01N10 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM01N10 is Pb-free and
Halogen-free.
WNM01N10
Http://www.sh-willsemi.com
D
S
G
SOT-23
D
3
12
GS
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
NA = Device Code
Y = Year
W = Week
Marking
Order information
Device
Package
WNM01N10-3/TR SOT-23
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
2016/01/18 – Rev. 1.2

1 page




WNM01N10 pdf
450
400
350
300
250
200
150
100
50
0
0
Ciss
f=1MHZ
VGS=0V
Crss
Coss
5 10 15 20
VDS-Drain to Source Voltage (V)
Capacitance
25
80
TJ(Max)=150C
60 TA=25C
40
20
0
1E-4
1E-3
0.01 0.1
1
Pulse width (S)
10 100
Single pulse power
WNM01N10
2.0
T=25C
1.5
1.0 T=150C
0.5
0.0
0.0
T=-50C
0.2 0.4 0.6 0.8
VSD- Source to Drain Voltage(V)
1.0
Body diode forward voltage
10
1
0.1
0.01
1ms
Limited by RDS(on)
DC
10ms
100ms
Bvdss Limit
1s
10s
1 10
VDS- Drain Source Voltage (V)
100
*VGS>minimum VGS at which RDS(on) is specified
Safe operating power
10
9 ID=1.5A
8
7
6
5
4
3
2
1
0
012
VDS=20V
V =40V
DS
V =80V
DS
VDS=60V
34567
Qg(nC)
Gate charge Characteristics
Will Semiconductor Ltd.
5
2016/01/18 – Rev. 1.2

5 Page










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