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PDF WCR380N65TH Datasheet ( Hoja de datos )

Número de pieza WCR380N65TH
Descripción MOSFET
Fabricantes WillSEMI 
Logotipo WillSEMI Logotipo

Total 9 Páginas
		
WCR380N65TH Hoja de datos, Descripción, Manual
WCR380N65T/WCR380N65TF/ WCR380N65TH
650V N-Channel Super Junction MOSFET
WCR380N65T series
Description
Features
The WCR380N65T series is new generation of high
voltage MOSFET family that is utilizing an advanced
charge balance mechanism for outstanding low
on-resistance and lower gate charge performance. This
advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. This device is suitable for various AC/DC power
conversion in switching mode operation for higher
efficiency.
700V@TJ=150°C
Typ.RDS(on)=0.33
Low gate charge(typ. Qg= 32nC)
100% avalanche tested
100% Rg tested
Order Information
Device
Package
Marking
Units/Tube Units/Real
WCR380N65T-3/T
TO-220
WCR380N65TYYWW
50
WCR380N65TF-3/T TO-220F WCR380N65TFYYWW
50
WCR380N65TH-3/TR TO-263E-2 WCR380N65THYW
800
Note 1: WCR380N65T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR380N65TF=Device code ; YY=Year ;WW=Week (A~z);
Note 3: WCR380N65TH=Device code ; Y=Year ;W=Week (A~z);
Absolution Maximum Ratings TA=25 oC unless otherwise noted
Parameter
Symbol
WCR380N65T
WCR380N65TH
TO-220
TO-220F
WCR380N65TF
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
650
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
10.6
6.7
30
215
2.7
0.30
Power Dissipation
TC=25°C
Derate above 25°C
PD
83
0.66
31.2
0.25
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
TL 260
Thermal Resistance Ratings
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
1.5
4
TO-263E-2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd.
1 Nov, 2016 - Rev.1.1

1 page

WCR380N65TH pdf
100
10 10us
1
0.1
0.011
Limit by Rdson*
TJ(MAX)=150C
TC=25C
Single Pulse
100us
1ms
10ms
DC
Bvdss Limit
10 100 1000
VDS- Drain Source Voltage (V)
TO-220 TO-263E-2
Safe operating area(Note F)
WCR380N65T series
100
10 10us
1
0.1
0.011
Limit by Rdson*
TJ(MAX)=150C
TC=25C
Single Pulse
100us
1ms
10ms
DC
Bvdss Limit
10 100 1000
VDS- Drain Source Voltage (V)
TO-220F
Safe operating area(Note F)
+*+
,*1
,*.
,*-
,*,1
+**
,*,.
,*,-
cY^W\U `e\cU
+*'+
+*+
,*1
,*.
,*-
,*,1
+**
,*,.
,*,-
cY^W\U `e\cU
+*'+
+*',
+*'/
+*'.
+*'-
+*',
1b QeR
+*'+
TO-220 TO-263E-2
+*',
+**
+*'/
+*'.
+*'-
+*',
+*'+
+**
+*+
1b QeR
TO-220F
Transient thermal response (Junction-to-Case)(Note F)
Will Semiconductor Ltd.
5 Nov, 2016 - Rev.1.1

5 Page



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