(PDF) WSB5549N Datasheet - Schottky Barrier Diode

Número de pieza	WSB5549N
Descripción	Schottky Barrier Diode
Fabricantes	WillSEMI
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No Preview Available ! WSB5549N Schottky Barrier Diode Features  High switching speed  Low leakage current  Small package DFN1006-3L Applications  High-speed switching  General-purpose switching Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current Junction temperature Operating temperature Storage temperature WSB5549N Http://www.willsemi.com DFN1006-3L(Bottom View) Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 100 100 150 1(1) 150 -65 ~ 150 -65 ~ 150 Unit V V mA A OC OC OC Electronics characteristics (TA=25oC) Parameter Reverse Voltage Per diode Forward Voltage Per diode Reverse current Per diode Junction capacitance Thermal Resistance Symbol VR VF IR CJ Rθ(JA) Condition IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=25V VR=70V VR=100V VR=5V, F=1MHz Junction to Ambient Min. 100 Typ. 3.4 Max. 0.5 0.6 0.8 1.2 50 0.5 1 500 Unit V V V V V nA uA uA pF K/W Will Semiconductor Ltd. 1 2015/4/24- Rev 1.0 1 page

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PDF WSB5549N Data sheet ( Hoja de datos )