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Número de pieza | WSB5539N | |
Descripción | Schottky Barrier Diode | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WSB5539N (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! WSB5539N
0.5A, Schottky Barrier Diode
Features
WSB5539N
Http://www.willsemi.com
Low forward voltage
0.5A Average rectified forward current
Peak forward current tested
Standard products are Pb-free and Halogen-free
DFN1006-2L
Circuit
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward current (1)
Junction temperature
Operating temperature
Storage temperature
Symbol
VRM
VR
IO
IFSM
TJ
Topr
Tstg
Marking
Value
40
40
0.5
3
150
-40 ~ 85
-55 ~ 150
Unit
V
V
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage
Reverse current
Junction capacitance
Thermal resistance
VF
IR
CJ
Rθ(j-a)
IF=0.5A
VR=40V
VR=4V, F=1MHz
Junction to ambient
Min.
-
-
-
Order Informations
Device
WSB5539N-2/TR
Package
DFN1006-2L
Marking
C* (2)
Note 1 : Pulse Width=8.3ms, Single Pulse
Note 2 : * = Month code (A~Z); C = Device code
Typ.
0.53
3
20
Max.
0.63
100
500
Unit
V
uA
pF
K/W
Shipping
10000/Reel&Tape
Will Semiconductor Ltd.
1 2014/9/10 – Rev. 1.0
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet WSB5539N.PDF ] |
Número de pieza | Descripción | Fabricantes |
WSB5539N | Schottky Barrier Diode | WillSEMI |
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