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Número de pieza | WSB5524D | |
Descripción | Schottky Barrier Diode | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WSB5524D (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! WSB5524D
Middle Power Schottky Barrier Diode
Features
1.5A Average rectified forward current
Low forward voltage,Low leakage current
FBP package
Applications
Switching circuit
Middle current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average forward current(1)
Forward Peak Surge Current (2)
Junction temperature
Operating temperature
Storage temperature
WSB5524D
Http://www.sh-willsemi.com
FBP1608-02L
Circuit
Symbol
VRRM
VR
IF(AV)
IFSM
TJ
Topr
Tstg
Marking
Value
40
40
1.5
7
125
-40 ~ 125
-55 ~ 150
Unit
V
V
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage (3)
Reverse current
Junction capacitance
Thermal resistance
VF
IR
CJ
Rθ(J-SP)
IF=1.5A
VR=40V
VR=4V, F=1MHz
Junction to soldering point of
cathode tab
Min.
Typ.
0.50
57
Max.
0.60
0.1
70
20
Unit
V
mA
pF
K/W
Order Informations
Device
WSB5524D-2/TR
Package
FBP1608-02L(1.6*0.8)
Marking
P* (4)
Shipping
10000/Reel&Tape
Note1: Duty cycle=0.5,f=20kHz,square wave;
Note2: Pulse width=8.3ms, single pulse;
Note3: Single Pulse, test Tp=380us;
Note4: * = Month code (A~Z); P = Device code;
Will Semiconductor Ltd.
1
May, 2014 - Rev. 1.2
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet WSB5524D.PDF ] |
Número de pieza | Descripción | Fabricantes |
WSB5524D | Schottky Barrier Diode | WillSEMI |
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