(PDF) WPMD2008 Datasheet - MOSFET ( Transistor )

Número de pieza	WPMD2008
Descripción	MOSFET ( Transistor )
Fabricantes	WillSEMI
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No Preview Available ! WPMD2008 Dual P-Channel, -20 V, - 4 .1A, Power MOSFET Description The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free. Features 9%5'66 í20 V 5'6RQ 0$; 110m¡@ í4.5V 138m¡@ í2.5V WPMD2008 Http://www.willsemi.com z Lowest RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with Common Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal Conduction Application z Optimized for Battery and Load Management Applications in Portable Equipment z LiíIon Battery Charging and Protection Circuits z High Power Management in Portable, Battery Powered Products z High Side Load Switch Order information Part Number WPMD2008-6/TR Part Number DFN 6 http://www.willsemi.com Page 1 PIN CONNECTIONS MARKING DIAGRAM WLSI EYWW E = Specific Device Code YWW = Date Code Shipping 3000Tape&Reel Dec,2011Ver1.2 1 page WPMD2008 http://www.willsemi.com Page 5 Dec,2011Ver1.2 5 Page

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PDF WPMD2008 Data sheet ( Hoja de datos )