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PDF WNMD3014 Data sheet ( Hoja de datos )

Número de pieza WNMD3014
Descripción Dual N-Channel MOSFET
Fabricantes Will Semiconductor 
Logotipo Will Semiconductor Logotipo



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No Preview Available ! WNMD3014 Hoja de datos, Descripción, Manual

WNMD3014
Dual N-Channel, 30V, 6.8A, Power MOSFET
VDS (V)
30
Rds(on) (ȍ)
0.023@ VGS=10V
0.033@ VGS=4.5V
WNMD3014
Http//:www.willsemi.com
Descriptions
The WNMD3014 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNMD3014 is Pb-free and
Halogen-free.
Features
SOP-8L
D1 D1 D2 D2
8 76 5
1 234
S1 G1 S2 G2
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Pin configuration (Top view)
87 6
WNM3014
YYWW
5
1 2 34
WNM3014 = Device Code
YY = Year
WW = Week
Marking
Order information
Device
Package
Shipping
WNMD3014-8/TR SOP-8L 2500/Reel&Tape
Will Semiconductor Ltd. 1 Mar, 2012 - Rev.1.0

1 page




WNMD3014 pdf
WNMD3014
1000
800
600
V =0,f=1MHZ
GS
C
iss
C
oss
C
rss
400
200
0
0 4 8 12 16 20
V Drain-to-Source Voltage (V)
DS
Capacitance
50
40
30
20
10
0
0.001 0.01
0.1 1
Time (s)
10
100
Single pulse power
1000
10
I =3.5A
D
8
3.0
250C
2.5 1500C
2.0
1.5
1.0
0.5
0.0
0.2 0.4 0.6 0.8 1.0
V -Source-to-Drain Voltage(V)
sd
1.2
Body diode forward voltage
100
Limited by RDS(on)
10
1 ms
1
10 ms
100 ms
0.1 1 s
10 s
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
DC
VDS - Drain-to-Source Voltage (V)
100
Safe operating power
6
4
2
0
0 3 6 9 12
Qg (nc)
Gate Charge Characteristics
15
Will Semiconductor Ltd. 5 Mar, 2012 - Rev.1.0

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