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PDF WNMD2179 Data sheet ( Hoja de datos )
| Número de pieza | WNMD2179 | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNMD2179
WNMD2179
Dual N-Channel, 20V, 6.3A, Power MOSFET
www.sh-willsemi.com
VDS (V)
Rds(on) (ȍ)
0.0175@ VGS=4.5V
0.0195@ VGS=3.1V
20
0.0215@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNMD2179 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2179 is Pb-free.
Features
TSOT-23-6L
G1 D1/D2 G2
654
1 23
S1 D1/D2 S2
Pin configuration (Top view)
6 54
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package TSOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
2179
NDYW
123
2179
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Marking
Order information
Device
WNMD2179-6/TR
Package
Shipping
TSOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Oct, 2014 - Rev.1.0
1 page  
1200
V =0V
GS
1000 f=100KHZ
800
600 Cin
Cout
400 Cres
200
0 2 4 6 8 10 12 14
V DraintoSource Voltage(V)
DS
Capacitance
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
Single pulse power
V =10V I =6.3A
DD D
4
WNMD2179
2.0
1.6
1.2
T=1500C
0.8
0.4
T=250C
0.2 0.4 0.6 0.8
V - Source toDrainVoltage (V)
SD
Body diode forward voltage
100
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
10
10Ps
100Ps
1
0.1
0.1
DC
10s
1 10
VDS (Volts)
1ms
10ms
100m
1s
100
Safe operating power
2
0
0 5 10 15
Q (nC)
g
Gate Charge Characteristics
Will Semiconductor Ltd.
5
Oct, 2014 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD2179.PDF ] | |
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