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PDF WNMD2173 Data sheet ( Hoja de datos )
| Número de pieza | WNMD2173 | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNMD2173
WNMD2173
Dual N-Channel, 20V, 6A, Power MOSFET
www.sh-willsemi.com
Vsss (V)
Typ Rss(on) (mΩ)
26@ VGS=4.5V
27@ VGS=4.0V
20
30@ VGS=3.1V
33@ VGS=2.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2173 is Dual N-Channel enhancement
MOS Field Effect Transistor and connecting the Drains
on the circuit board is not required because the Drains
of the MOSFET1 and the MOSFET2 are internally
connected. Uses advanced trench technology and
design to provide excellent RSS(ON) with low gate
charge. This device is designed for Lithium-Ion battery
protection circuit. The WNMD2173 is available in
CSP 4L package. Standard Product WNMD2173 is
Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package CSP 4L
MOSFET1
Gate 1
MOSFET2
Gate 2
Gate
Protection
Diode
Source 1
Body Diode
CSP 4L
Source 2
43
73
YW
12
1: Source 1
2: Gate 1
3: Gate 2
4: Source 2
73 = Device Code
Y = Year
W = Week（A~z）
Pin configuration (TOP view)& Marking
Applications
Lithium-Ion battery protection circuit
Order information
Device
WNMD2173-4/TR
Package
CSP-4L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.3
1 page  
Typical Characteristics (Ta=25oC, unless otherwise noted)
15
TEST CIRCUIT 5
10
VGS=1.5V
VGS=2.5V
VGS=3.0V
V =4.0V
GS
VGS=4.5V
VGS=10.0V
100
80
60
WNMD2173
TEST CIRCUIT 5
IS=3.0A
5
0
0.0 0.2 0.4 0.6 0.8
VSS-Source to Source Voltage-V
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
35
TEST CIRCUIT 5
VGS=2.5V
1.0
30 VGS=3.1V
VGS=4.0V
25
VGS=4.5V
20
2345
IS - Source Current(A)
6
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
55
TEST CIRCUIT 5
50 IS=3.0A
45
40
35
30
25 VGS=4.5V
20
VGS=4.0V
VGS=3.1V
15 VGS=2.5V
10
-50 0 50 100
T -Channel Temperature-oC
ch
150
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
20
0 2 4 6 8 10
VGS-Gate-to-Source Voltage(V)
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.4
TEST CIRCUIT 3
1.2 IS=250uA
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature (oC)
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
TEST CIRCUIT 7
VGS=0V
f=1kHz
1000
Crss
C
oss
C
iss
100
5 10 15 20
VSS-Source to Source Voltage-V
CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE
Will Semiconductor Ltd. 5 Jan, 2015 - Rev.1.3
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD2173.PDF ] | |
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