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PDF WNMD2172 Data sheet ( Hoja de datos )
| Número de pieza | WNMD2172 | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNMD2172
Dual N-Channel, 20V, 7.0A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Rds(on) (Ω)
0.015@ VGS=4.5V
0.0155@ VGS=4.0V
0.017@ VGS=3.1V
0.018@ VGS=2.5V
0.021@ VGS=1.8V
The WNMD2172 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2172 is Pb-free and
Halogen-free.
Features
WNMD2172
Http//:www.sh-willsemi.com
TSSOP-8L
D1/D2 S2 S2 G2
8 76 5
12 34
D1/D2 S1 S1 G1
Pin configuration (Top view)
87 65
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package TSSOP-8L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
WLS I
2 1 72
WDYW
12 3 4
WLSI
2172
WD
= Willsemi
= Device Code
= Special Code
Y = Year
W = Week
Marking
Order information
Device
WNMD2172-8/TR
Package
TSSOP-8L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.1
1 page  
2500
2000
1500
V =0V
GS
f=1MHZ
CISS
1000
500
0
0
CRSS
COSS
2468
VDS-Drain to Source Voltage(V
10
Capacitance
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
Single pulse power
4
V =10V,
DD
I =4.8A
D
3
WNMD2172
20
T=150oC
15
10 T=25oC
5
0.0 0.3 0.6 0.9 1.2 1.5
VSD- Source to Drain Voltage (V)
Body diode forward voltage
100
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
10
10Ps
100Ps
1
0.1
0.1
DC
10s
1 10
VDS (Volts)
1ms
10ms
100m
1s
100
Safe operating power(Note.e)
2
1
0
0 5 10 15
Qg(nC)
Gate Charge Characteristics
20
Will Semiconductor Ltd. 5 Jan, 2015 - Rev.1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD2172.PDF ] | |
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