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PDF WNMD2171 Data sheet ( Hoja de datos )

Número de pieza WNMD2171
Descripción Dual N-Channel MOSFET
Fabricantes Will Semiconductor　
Logotipo Will Semiconductor Logotipo



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No Preview Available ! WNMD2171 Hoja de datos, Descripción, Manual

WNMD2171
Dual N-Channel, 20V, 6A, Power MOSFET
Vsss (V)
Typ Rss(on) (mΩ)
36@ VGS=4.5V
38@ VGS=4.0V
20
41@ VGS=3.1V
43@ VGS=2.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2171 is Dual N-Channel enhancement
MOS Field Effect Transistor and connecting the Drains
on the circuit board is not required because the Drains
of the MOSFET1 and the MOSFET2 are internally
connected. Uses advanced trench technology and
design to provide excellent RSS(ON) with low gate
charge. This device is designed for Lithium-Ion battery
protection circuit. The WNMD2171 is available in
CSP-4L package. Standard Product WNMD2171 is
Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package CSP 4L
WNMD2171
www. sh-willsemi.com
MOSFET1
Gate 1
MOSFET2
Gate 2
Gate
Protection
Diode
Source 1
Body Diode
CSP 4L
Source 2
43
71
YW
12
1: Source 1
2: Gate 1
3: Gate 2
4: Source 2
71 = Device Code
Y = Year
W = Week（A~z）
Pin configuration (TOP view) & Marking
Applications
Lithium-Ion battery protection circuit
Order information
Device
WNMD2171-4/TR
Package
CSP 4L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.4

1 page




WNMD2171 pdf
WNMD2171
Typical Characteristics (Ta=25oC, unless otherwise noted)
70 TEST CIRCUIT 5
60
V =4V
GS
50 VGS=4.5V
40 V =3.1V
GS
30
V =2.5V
20 GS
100
90
80
70
60
50
40
TEST CIRCUIT 5
IS=3.0A
10 30
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSS-Source to Source Voltage(V)
SOURCE CURRENT vs.
20
1234567
VGS-Gate-to-Source Voltage(V)
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE TO SOURCE VOLTAGE
45
TEST CIRCUIT 5
VGS=2.5V
GATE TO SOURCE VOLTAGE
1.2
TEST CIRCUIT 3
IS=250uA
40
VGS=3.1V
1.0
35
VGS=4.5V VGS=4.0V
30
246
IS - Source Current(A)
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature (oC)
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.6 TEST CIRCUIT 5
V =4.5V
GS
I =3.0A
1.4 S
1.2
TEST CIRCUIT 7
f=1KHz
VGS=0V
1000
C
iss
C
oss
Crss
1.0
0.8 100
0.6
-50 0 50 100 150
Tch - Channel Temperature(oC)
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5 10 15
VSS-Source to Source Voltage-V
20
CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE
Will Semiconductor Ltd. 5 Jan, 2015 - Rev.1.4

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