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PDF WNMD2162A Data sheet ( Hoja de datos )
| Número de pieza | WNMD2162A | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNMD2162A
Dual N-Channel, 20V, 4.8A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Rds(on) (Ω)
0.014@ VGS=4.5V
0.015@ VGS=3.1V
0.016@ VGS=2.5V
The WNMD2162A is Dual N-Channel
enhancement MOS Field Effect Transistor. Uses
advanced trench technology and design to provide
excellent RDS (ON) with low gate charge. This device is
suitable for use in DC-DC conversion, power switch
and charging circuit. Standard Product WNMD2162A
is Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN2.9×2.8-8L
WNMD2162A
Http://www.sh-willsemi.com
PDFN2.9×2.8-8L
D2 D2 D1 D1
8 7 65
1 23 4
S2 G2 S1 G1
Pin configuration (Top view)
8 765
2162A
YYWW
1 2 34
2162A = Device Code
YY = Year
WW = Week
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Marking
Order information
Device
WNMD2162A-8/TR
Package
PDFN
2.9×2.8-8L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.1
1 page  
WNMD2162A
2500
2000
1500
V =0V
GS
f=1MHZ
CISS
1000
500
0
0
100
80
CRSS
COSS
2468
VDS-Drain to Source Voltage(V
10
Capacitance
TA=25oC
60
40
20
1E-4 1E-3 0.01
0.1
1
Time(s)
Single pulse power
10
100
4 VDD=10V,
I =4.8A
D
3
20
T=150oC
15
10 T=25oC
5
0.0 0.3 0.6 0.9 1.2 1.5
VSD- Source to Drain Voltage (V)
Body diode forward voltage
100
Limited by R (on)*
DS
10
100us
1ms
1 10ms
0.1
TA=25oC
Single Pulse
B Limited
VDSS
100ms
1s
10s
DC
0.01
0.1 1 10 100
VDS-Drian-to-Source Votage(V)
* VGS > minimum VGS at which RDS(on) is specified
Safe operating power
2
1
0
0 5 10 15
Qg(nC)
Gate Charge Characteristics
20
Will Semiconductor Ltd. 5 Jan, 2015 - Rev.1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD2162A.PDF ] | |
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