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PDF WNM2046 Data sheet ( Hoja de datos )

Número de pieza WNM2046
Descripción N-Channel MOSFET
Fabricantes Will Semiconductor 
Logotipo Will Semiconductor Logotipo



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No Preview Available ! WNM2046 Hoja de datos, Descripción, Manual

WNM2046
Single N-Channel, 20V, 0.71A, Power MOSFET
VDS (V)
20
Typical Rds(on) (Ω)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.315@ VGS=1.8V
WNM2046
Http://www.sh-willsemi.com
G
S
D
Descriptions
DFN1006-3L
The WNM2046 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2046 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
D
GS
Pin configuration (Top view)
6 = Device Code
* = Month (A~Z)
Marking
Small Signal Switching
Small Moto Driver
Order information
Device
WNM2046-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2014- Rev.1.2

1 page




WNM2046 pdf
WNM2046
60
VGS=0V
50 F=10 0KHz
40
Ciss
30
Coss
Crss
20
10
0
0 2 4 6 8 10
VDS Drain-to-Source Voltage (V)
Capacitance
30
25
20
15
10
5
0
1E-3
0.01
TJ(Max) =150°C
TA=25°C
0.1 1 10
Pulse width (S)
100 1000
Single pulse power
1.0
0.8
0.6 150oC
0.4
0.2 25oC
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V - Source to Drain Voltage(V)
SD
Body diode forward voltage
10
Limit by Rdson
1
IDM Limit
1ms
DC
0.1
10ms
0.01
0.1
TA=25°C
Single pulse
10S
100ms
1S
BVdss Limit
1 10
VDS - Drain to Source Voltage (V)
*VGS>minimum VGS at which RDS(on) is specified
100
Safe operating power
5
4 VDS=10V
ID=0.55A
3
2
1
0
0 150 300 450 600 750 900
Qg(pC)
Will Semiconductor Ltd. 5 Aug, 2014 - Rev.1.2

5 Page










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