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PDF FGH50T65SQD Data sheet ( Hoja de datos )
| Número de pieza | FGH50T65SQD | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGH50T65SQD
650 V, 50 A Field Stop Trench IGBT
April 2016
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 4th generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 3 Ω, Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2016 Fairchild Semiconductor Corporation
FGH50T65SQD Rev. 1.0
1
C
G
E
FGH50T65SQD_F155
650
± 20
± 30
100
50
200
200
50
30
200
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
1000
Cies
100
Coes
10
Common Emitter
Cres
VGE = 0V, f = 1MHz
TC = 25oC
1
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
100
tr
30
td(on)
10
5
0
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 11. Switching Loss vs.
Gate Resistance
5000
1000
100
0
Eon
Eoff Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9 VCC = 200V
400V
300V
6
3
0
0 20 40 60 80 100
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
td(off)
100
10
0
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 12. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
VGE = 15V, RG = 4.7Ω
100 TC = 25oC
TC = 175oC
tr
td(on)
10
0 25 50 75 100 125 150
Collector Current, IC [A]
©2016 Fairchild Semiconductor Corporation
FGH50T65SQD Rev. 1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FGH50T65SQD.PDF ] | |
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