|
|
PDF EMDA0P10G Data sheet ( Hoja de datos )
| Número de pieza | EMDA0P10G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMDA0P10G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐100V
D
RDSON (MAX.)
120mΩ
ID
‐3.4A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2016/9/1
EMDA0P10G
LIMITS
±20
‐3.4
‐2.7
‐13.6
2.5
1.6
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
EMDA0P10G
10
Gate Charge Characteristics
I D = ‐ 3.4A
8
6
V D S = ‐ 80V
4
5000
4000
3000
2000
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
1000
Coss
0 Crss
60 0 10 20 30
‐ VD S , Drain‐Source Voltage( V )
40
100
Maximum Safe Operating Area
10 R D S ( O N )Limit
1
0.1
1S
10S
DC
1mS100uS
10mS
100mS
VG S = ‐10V
Single Pulse
R JA = 50°C/W
TA = 25°C
0.01
0.1 1 10 100
‐ V D S ‐ D r a in ‐ S o u r c e V o lt a g e ( V )
1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1 1 10
t 1 ,Time ( sec )
100 1000
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4 10‐3 10‐2
10 ‐1 1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ J A =50°C/W
3.TJ ‐ TA = P * R θ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2016/9/1
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMDA0P10G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMDA0P10F | Field Effect Transistor | Excelliance MOS |
| EMDA0P10G | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |