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Número de pieza | EMF09P02CS | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMF09P02CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
9mΩ
ID
‐56A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐25A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2016/3/11
EMF09P02CS
LIMITS
±8
‐56
‐35
‐150
‐25
62.5
31.25
56
22
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
62.5
UNIT
°C / W
p.1
1 page EMF09P02CS
Gate Charge Characteristics
5
I D = ‐ 24A
4
3
12000
10000
8000
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
VD S = ‐ 5V ‐ 10V
2
6000
4000
1
2000
Coss
0
0 15 30 45 60 75
0 Crss
0 5 10 15 20
Q g ‐ Gate Charge( nC )
‐ VD S , Drain‐Source Voltage( V )
Maximum Safe Operating Area
300
100 R d s (o n ) Limit
10μ s
100μ s
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000 RSTθIC N J= C G= 2 L25E°. C5P° UC/LWSE
2500
1ms 2000
10
10ms
DC100ms
1500
1000
1
VG S = ‐4.5V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25° C
500
0.5
0.5 1
10
100
0 0.01
0.1
1
10 100
1000
‐VD S ,Drain‐Source Voltage( V )
SINGLE PULSE TIME ( mSEC )
1 Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Notes:
DM
1.Duty Cycle,D =
t1
t2
2 .Rθ J C = 2 .5 ° C / W
Single Pulse
0.01
3 .TJ ‐ T C = P * R θ J C (t )
4 .Rθ JC (t )= r (t ) * Rθ JC
10‐2 10‐1
1
10 100
t 1 ,T im e ( m S E C )
1000
2016/3/11
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMF09P02CS.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMF09P02CS | Field Effect Transistor | Excelliance MOS |
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