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PDF EMZFA1P03Z Data sheet ( Hoja de datos )
| Número de pieza | EMZFA1P03Z | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
110mΩ
ID ‐2.4A
Pb‐Free Lead Plating & Halogen Free
ESD Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
395°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/9/2
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
EMZFA1P03Z
LIMITS
±12
‐2.4
‐1.8
‐9.6
1.3
0.84
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
95
UNIT
°C / W
p.1
1 page  
EMZFA1P03Z
M a xim u m Sa fe O p e ra tio n A re a
100
10
R D S (O N )L IM IT
1
1m s 100 μ s
10ms
D
10
C
1
s
s
100ms
0 .1
V G S = ‐ 4 . 5 V
SIN G LE P U LSE
R θ JA
TA =
=
2
9
5
5 ° C
°C
/
W
0 .0 1
0.1 1
10 100
‐ VD S , D r a in ‐ S o u r c e V o l t a g e ( V )
Capacitance Characteristics
900
f =1MHz
VGS=0 V
750
600
Ciss
450
300
150
Coss
Crss
0
0
7.5 15
22.5 30
‐ VD S , Drain‐Source Voltage( V )
1000 Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J A = 95°C/W
TA = 25°C
100
10
1
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
t 1 ,Time ( SEC )
Transient Thermal Response Curve
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
Rθ J A (t)= r(t) *RθJA
Rθ JA = 95 °C/W
P(pk)
t1
t2
Tj ‐ TA = P * Rθ J A (t)
0.001
0.0001
0.001
0.01
0.1
1
Duty Cycle,D= t1 / t2
10 100
1000
t1 , Time( SEC )
2015/9/2
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMZFA1P03Z.PDF ] | |
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