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PDF EMD04N06H Data sheet ( Hoja de datos )
| Número de pieza | EMD04N06H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
5mΩ
ID 75A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD04N06H
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=70A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
75
45
160
70
245
122
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2.5
°C / W
62
2014/8/14
p.1
1 page  
Gate Charge Characteristics
10
I D = 20A
8
VD S = 15V 30V
6
4
EMD04N06H
8000
6000
4000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
2000
0
0
Coss
Crss
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
1000
M a x im u m S a fe O p e ra tin g A re a
1 0 0
R d s (o n ) L im it
10
1 0 μ s
1 0 0 μs
D
1
C
0
01m0sm1 ms s
1 V G S = 1 0 V
SIN G LE P U LSE
R θ J C = 2 . 5 °C / W
T c = 2 5 °C
0.1
0 .1
1
10
V D S , D r a i n ‐ S o u r c e V o l t a g e ( V )
100
3000
2500
2000
1500
1000
500
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC J= C = 2 25°. C5° C/W
0.1 1 10 100
Single Pulse Time( mSEC )
1000
1
D uty Cycle = 0.5
0 .5
Transient Therm al R esponse Curve
0.3
0.2 0.2
0 .1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
S in g le P u lse
0.01
1 0‐2
1 0‐1
N o te s:
DM
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 ° C / W
3 .TJ ‐ T C = P * R θ J C ( t )
4 .R θ J C (t )= r (t ) * RθJC
1 10
t 1 ,T im e ( m S E C )
100
1000
2014/8/14
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD04N06H.PDF ] | |
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