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PDF S29C51002T Data sheet ( Hoja de datos )

Número de pieza S29C51002T
Descripción 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY
Fabricantes SyncMOS 
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SyncMOS Technologies Inc.
S29C51002T/S29C51002B
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Features
s 256Kx8-bit Organization
s Address Access Time: 70, 90, 120, 150 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 16KB Boot Block (lockable)
s 512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 35ms (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100mA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.5V
s Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in one versions
– S29C51002T (Top Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
TheS29C51002T/S29C51002B is a high speed
262,144 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The S29C51002T/S29C51002B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O7 or by the Toggle Bit I/O6.
The S29C51002T/S29C51002B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (S29C51002T) or the bottom (S29C51002B).
All inputs and outputs are CMOS and TTL
compatible.
The S29C51002T/S29C51002B is ideal for
applications that require updatable code and data
storage.
S29C51002T/S29C51002B V1.0 May 2002
1

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S29C51002T pdf
SyncMOS Technologies Inc.
S29C51002T/S29C51002B
AC Electrical Characteristics
(over all temperature ranges)
Read Cycle
Parameter
Name
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tDF
tOH
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
CE Low to Output Active
OE Low to Output Active
OE or CE High to Output in High Z
Output Hold from Address Change
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
-70 -90 -12 -15
Min. Max. Min. Max. Min. Max. Min. Max. Unit
70 — 90 — 120 — 150 — ns
— 70 — 90 — 120 — 150 ns
— 70 — 90 — 120 — 150 ns
— 35 — 45 — 60 — 75 ns
0 — 0 — 0 — 0 — ns
0 — 0 — 0 — 0 — ns
0 30 0 40 0 50 0 60 ns
0 — 0 — 0 — 0 — ns
Program (Erase/Program) Cycle
Parameter
Name Parameter
tWC
tAS
tAH
tCS
tCH
tOES
tOEH
tWP
tWPH
tDS
tDH
tWHWH1
tWHWH2
tWHWH3
Write Cycle Time
Address Setup Time
Address Hold Time
CE Setup Time
CE Hold Time
OE Setup Time
OE High Hold Time
WE Pulse Width
WE Pulse Width High
Data Setup Time
Data Hold Time
Programming Cycle
Sector Erase Cycle
Chip Erase Cycle
-70 -90 -12 -15
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit
70 — — 90 — — 120 — — 150 — — ns
0 — — 0 — — 0 — — 0 — — ns
45 — — 45 — — 50 — — 50 — — ns
0 — — 0 — — 0 — — 0 — — ns
0 — — 0 — — 0 — — 0 — — ns
0 — — 0 — — 0 — — 0 — — ns
0 — — 0 — — 0 — — 0 — — ns
35 — — 45 — — 50 — — 50 — — ns
20 — — 30 — — 35 — — 35 — — ns
30 — — 30 — — 30 — — 30 — — ns
0 — — 0 — — 0 — — 0 — — ns
— — 35 — — 35 — — 35 — — 35 ms
— — 10 — — 10 — — 10 — — 10 ms
— — 3.0 — — 3.0 — — 3.0 — — 3.0 sec
S29C51002T/S29C51002B V1.0 May 2002
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S29C51002T arduino
SyncMOS Technologies Inc.
Boot Block Protection Status
In Autoselect mode, performing a read at
address location 3CXX2H (S29C51002T) or
0CXX2H (S29C51002B) will indicate boot block
protection status. If the data is 01H, the boot block
is protected. If the data is 00H, the boot block is
unprotected. This is also shown is table 3.
Device ID
In Autoselect mode, performing a read at
address XXX1H will determine whether the device
is a Top Boot Block device or a Bottom Boot Block
device. If the data is 02H, the device is a Top Boot
Block. If the data is A2H, the device is a Bottom
Boot Block device (see Table 3).
S29C51002T/S29C51002B
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Manufacturer ID
In Autoselect mode, performing a read at
address XXXX0H will determine the manufacturer
ID. 40H is the manufacturer code for SyncMOS
Flash.
Hardware Data Protection
VCC Detection: the program operation is inhibited
when VCC is less than 3.5V.
Noise Protection: a CE or WE pulse of less than
5ns will not initiate a program cycle.
Program Inhibit: holding any one of OE LOW, CE
HIGH or WE HIGH inhibits a program cycle.
Table 3. Autoselect Decoding
Decoding Mode
Boot Block
Boot Block Protection
Top
Bottom
Device ID
Top
Bottom
Manufacture ID
NOTE:
1. X = Don’t Care, VIH = HIGH, VIL = LOW.
Address
A0 A1 A2–A13 A14–A17 Data I/O0–I/O7
VIL VIH X VIH 01H: protected
VIL VIH X VIL 00H: unprotected
VIH VIL
X
X 02H
A2H
VIL VIL X
X 40H
S29C51002T/S29C51002B V1.0 May 2002
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