|
|
Número de pieza | EMD04N04E | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD04N04E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
4mΩ
ID
155A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD04N04E
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=80A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
155
110
540
80
320
160
227
73
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=20V, L=0.1mH, VG=10V, IL=50A, Rated VDS=40V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
0.55
62.5
°C / W
2014/11/17
p.1
1 page EMD04N04E
Gate Charge Characteristics
10
I D = 20A
8
VD S = 10V 20V
6
4
2
0
0
30 60 90
Q g ‐ Gate Charge( nC )
120
6000
4500
3000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
1500
0
0
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
Maximum Safe Operating Area
103
RDS(ON) Limited
102
10μs
100μs
1ms
101
10ms
DC
100
TC=25°C
RθJC=0.55°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
3000
Single Pulse
Rθ JC = 0.55 °C/W
TC = 25 °C
2500
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=0.55°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2014/11/17
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMD04N04E.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD04N04E | Field Effect Transistor | Excelliance MOS |
EMD04N04H | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |