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PDF EMD04N08E Data sheet ( Hoja de datos )
| Número de pieza | EMD04N08E | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
4.6mΩ
ID
160A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD04N08E
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=90A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±30
160
126
540
90
405
202
250
100
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=60A, Rated VDS=80V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
0.50
60
°C / W
2015/10/22
p.1
1 page  
10
Gate Charge Characteristics
I D = 50A
VD S = 20V
8
40V
6
4
EMD04N08E
8000
6000
4000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
2
0
0 20 40 60 80
Q g ‐ Gate Charge( nC )
2000
0
0
Coss
Crss
20 40 60
VD S ‐ Drain‐Source Voltage( V )
80
Maximum Safe Operating Area
103
RDS(ON) Limited
102
10μs
100μs
101
1ms
10ms
DC
100
TC=25°C
RθJC=0.50°C/W
Vgs=10V
Single Pulse
10‐1
100 VDS, Dra10in1 ‐Source Voltage( V ) 102
3000
2500
2000
1500
1000
500
0
0.01
Single Pulse Maximum Power Dissipation
RSθi n JC g=le 0 P.5u0l°s Ce/W
TC = 25° C
0.1 1 10 100
Single Pulse Time( sec )
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
※Note :
1. RθJC(t)=0.50°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.02
0.01
10‐2
single pulse
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2015/10/22
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD04N08E.PDF ] | |
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