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Número de pieza | EMD03N06ES | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD03N06ES (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
4.0mΩ
ID
150A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD03N06ES
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=80A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
150
97
450
80
320
160
166
66
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
0.75
62.5
°C / W
2016/10/25
p.1
1 page Gate Charge Characteristics
10
I D = 24A
VD S = 15V
8
25V
6
4
EMD03N06ES
4000
Capacitance Characteristics
3000
Ciss
f = 1MHz
VG S = 0 V
2000
Coss
2
0
0 15 30 45 60
Q g ‐ Gate Charge( nC )
1000
0
0
Crss
10
20 30 40
VD S ‐ Drain‐Source Voltage( V )
50
Maximum Safe Operating Area
103
RDS(ON) Limited
102
10μs
100μs
1ms
101
10ms
DC
Single Pulse Maximum Power Dissipation
3000
Single Pulse
Rθ JC = 0.45 °C/W
TC = 25 °C
2500
2000
1500
1000
100
TC=25°C
RθJC=0.45°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
500
0 0.01
0.1 1
10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=0.45°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2016/10/25
p.5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet EMD03N06ES.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD03N06E | Field Effect Transistor | Excelliance MOS |
EMD03N06ES | Field Effect Transistor | Excelliance MOS |
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