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PDF RB088NS150 Data sheet ( Hoja de datos )
| Número de pieza | RB088NS150 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diode
RB088NS150
Datasheet
lApplication
Switching power supply
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
lFeatures
1) Cathode common dual type
2) Low IR
3) High reliability
4) AEC-Q101 qualified
RB088
NS150
1
LPDS
lStructure
Cathode
lConstruction
Silicon epitaxial planar
ROHM : LPDS
JEITA : TO263S
1 Manufactuare Year, Week and Day
lTaping specifications (Unit : mm)
Anode Anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
150
150
10
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
IFSM
Tj
50
150
Storage temperature
Tstg
-55 to +150
(*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave
(*2) Per Diode.
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF - 0.78 0.88
IR - - 15
Thermal resistance
Rth(j-c) - - 2
Unit
V
V
A
A
°C
°C
Unit
V
mA
°C/W
Conditions
IF=5.0A
VR=150V
junction to case
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.06 - Rev.B
1 page  
RB088NS150
lElectrical characteristic curves
Data Sheet
0.25
0.2
0.15 DC
0.1 D = 1/2
Sin(θ=180)
0.05
0
0 50 100 150
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
12
10
DC
8
D = 1/2
6
0A Io
0V
t
VR
D=t/T
T VR=75V
Tj=150°C
4
Sin(θ=180)
2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
10
DC
0A Io
0V
t
VR
D=t/T
T VR=750V
Tj=150°C
D = 1/2
5
Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
3
AVE : 2.21kV
2.5
2
1.5
1
AVE : 0.47kV
0.5
0 C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/5
2013.06 - Rev.B
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RB088NS150.PDF ] | |
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