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Número de pieza | EMF30N02P | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMF30N02P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
30mΩ
ID 5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
385°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/8/6
EMF30N02P
LIMITS
±12
5
3.75
20
1.47
0.94
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
18
85
UNIT
°C / W
p.1
1 page EMF30N02P
5
G a te ‐C h a rg e C h a ra c te ristic s
ID = 5A
4
Capacitance Characteristics
450
f =1MHz
375
VGS=0 V
3
2
1
0
0
VDS= 5V
10V
2 4 6 8 10
Q g, Gate Charge ( nC )
12
300
225
150
75
0
0
Ciss
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
100
M axim u m Safe O p e ratin g A re a
10 R D S ( O N ) Limit
100μs
1ms
10ms
100ms
1
1s
10s
DC
0.1
VG S = 4 .5 V
Single Pulse
R J A = 8 5 ° C / W
T A = 2 5 ° C
0.01
0.1
1 10
VD S ‐ D r a in ‐ S o u r c e V o lt a g e ( V )
100
Single Pulse M axim um Power Dissipation
50
Single Pulse
Rθ J A = 85 °C /W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t 1 ,Tim e ( sec )
10
100 1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
Transient Thermal Response Curve
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =85°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
t 1 ,Time (sec)
2015/8/6
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMF30N02P.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMF30N02A | Field Effect Transistor | Excelliance MOS |
EMF30N02H | Field Effect Transistor | Excelliance MOS |
EMF30N02J | Field Effect Transistor | Excelliance MOS |
EMF30N02JS | Field Effect Transistor | Excelliance MOS |
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