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Número de pieza | EMP16N04HS | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMP16N04HS (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
1.6mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMP16N04HS
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
100
100
400
Avalanche Current
IAS 85
Avalanche Energy
Repetitive Avalanche Energy3
L = 0.1mH, ID=85A, RG=25Ω
L = 0.05mH
EAS
EAR
361
180
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
65
26
‐55 to 150
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=40V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient4
RJA
1 Package Limited.
2Pulse width limited by maximum junction temperature.
3Duty cycle 1%
450°C / W when mounted on a 1 in2 pad of 2 oz copper.
1.9
°C / W
50
2017/3/15
p.1
1 page EMP16N04HS
12
G a te C h a rg e C h a ra c te ris tic s
ID = 5 0 A
10
8
V DS =20V
6
C a p a c ita n c e C h a ra c te ris tic s
10 4
C is s
10 3 Coss
Crss
4
10 2
2
0
0
30 60
Q g ,G a te C h a rg e ( n C )
90
f = 1 M Hz
V G S= 0 V
0 5 10 15 20 25 30 35 40
VDS ‐D rain‐Source Voltage( V )
1000
100
10
M a x im u m S a fe O p e ra tin g A re a
R d s ( o n )Lim it
1ms
D
1
C
0
0
1
m
0
s
m
s
1 0 μ s
1 0 0 μs
1 V G S = 1 0 V
S in g le P u lse
R θ J C = 1 . 9 °C / W
T c = 2 5 °C
0 .1
0 .1
1 10
V D S , D r a i n ‐ S o u r c e V o l t a g e ( V )
100
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
SRTiθC n J= Cg = l2e 15 °P. 9Cu° Cls/eW
0.1 1 10 100
Single Pulse Time ( mSEC )
1000
1
D u ty C y c le = 0 .5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
S in g le P u ls e
0.01
1 0‐2
1 0‐1
Transient Therm al Response Curve
Notes:
DM
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 1 .9 °C / W
3 .TJ ‐ T C = P * R θ J C (t)
4 .R θ J C (t )= r (t ) * Rθ JC
1 10
t 1 ,T im e ( m S E C )
100
1000
2017/3/15
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMP16N04HS.PDF ] |
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EMP16N04HS | Field Effect Transistor | Excelliance MOS |
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