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Número de pieza | EMB32N03VAT | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB32N03VAT (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
35mΩ
ID 5.5A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
G D D
PIN 1
SYMBOL
EMB32N03VAT
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=6A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
5.5
3.6
22
6
1.8
0.9
2.08
1.33
‐55 to 150
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
360°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/7/22
TYPICAL
MAXIMUM
12
60
UNIT
°C / W
p.1
1 page Gate Charge Characteristics
10
I D = 5.5A
8
VD S = 5V
10V
6
15V
4
2
0
0
36
Q g ‐ Gate Charge( nC )
9
12
EMB32N03VAT
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20
VD S ‐ Drain‐Source Voltage( V )
25
30
100
Maximum Safe Operating Area
10 R D S (O N ) Limit
100μs
1ms
10ms
1
100ms
1s
10s
DC
0.1
VG S = 10V
Single Pulse
R J A = 60°C/W
T A = 25°C
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
600
500
Sin gle P u lse M a xim u m P o w e r D issip a tio n
Sin g le P u lse
Rθ J A = 6 0 ° C / W
T A = 2 5 ° C
400
300
200
100
0
0 .00 00 1 0.0 00 1
0.0 01
0 .01
t 1 , T im e ( s e c )
0 .1
1
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐5
10‐4
Transient Thermal Response Curve
10‐3
10 ‐2
10‐1
t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
1 10
100
2015/7/22
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB32N03VAT.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB32N03VAT | Field Effect Transistor | Excelliance MOS |
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