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Número de pieza | EMBE0A10G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBE0A10G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
500mΩ
ID 1.5A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
VGS
ID
IDM
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
EMBE0A10G
LIMITS
±20
1.5
0.9
6
2
0.8
‐55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/30
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page EMBE0A10G
10
Gate Charge Characteristics
I D = 1.5A
8
6
VD S = 25V 50V
4
2
0
0
3 69
Q g ‐ Gate Charge( nC )
12
Capacitance Characteristics
500
450
f = 1M H z
V G S = 0 V
400
350
Ciss
300
250
200
150
100
50
0
0
Coss
Crss
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
100
M axim um Safe O p eratin g A rea
10
1 R D S (O N )Limit
0.1
10uS
100uS
1mS
DC 100m10SmS
VG S = 10V
Single Pulse
0.01
R J A= 6 2 .5 ° C / W
T A = 2 5 ° C
0.1 1 10 100
VD S ‐ Drain‐Source Voltage( V )
1000
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 62.5°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t 1 ,Time ( sec )
10
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =62.5°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2013/8/30
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBE0A10G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBE0A10G | Field Effect Transistor | Excelliance MOS |
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